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2SK3532-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F 200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Ratings Unit V 900 V 900 Equivalent A Continuous drain current 6 A Pulsed drain current 24 V Gate-source voltage 30 A Repetitive or non-repetitive 6 mJ Maximum Avalanche Energy 244 kV/s Maximum Drain-Source dV/dt 40 Peak Diode Recovery dV/dt 5 kV/s Gate(G) Max. power dissipation 2.16 W 70 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *6 2 kVrms *1 L=12.4mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS< 900V *5 VGS=-30V *6 t=60sec, f=60Hz = = = = Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C
circuit schematic
Drain(D)
Source(S)
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C VDS=720V VGS=0V Tch=125C VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3A VGS=10V RGS=10 VCC=450V ID=6A VGS=10V L=12.4mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch=25C
Min.
900 3.0
Typ.
Max.
5.0 25 250 100 2.50 1125 150 11 32 12 63 16.5 32 4.5 10.5 1.50
Units
V V A nA S pF
3.7
1.92 7.4 750 100 7 21 8 42 11 21.5 3 7 0.90 1.1 5.5
ns
nC
6
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.560 58.0
Units
C/W C/W
1
2SK3532-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
8 80
FUJI POWER MOSFET
100
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C
20V 10V 8.0V 7.0V
6.5V 6
6.0V
60
PD [W]
ID [A]
4 40 2
20
VGS=5.5V
0 0 25 50 75 100 125 150
0 0 5 10 15 20
Tc [C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
10 10
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
ID[A]
1
gfs [S]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
VGS[V]
ID [A]
2.6
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=5.5V 6.0V 6.5V 7.0V 8.0V 10V 20V
7
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V
2.5
6
2.4 5
RDS(on) [ ]
2.3
RDS(on) [ ]
4 max.
2.2
3
2.1
2 2.0 1
typ.
1.9
1.8 0 2 4 6 8 10
0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3532-01MR
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25C
12 Vcc= 180V 450V max. 10 720V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 5 10 15 20 25 30 35
Tch [C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
10
0
Ciss
10
C [nF]
10
-1
Coss
IF [A]
1 0.1 0.00
10
-2
Crss
10
-3
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
800
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
IAS=2A
tf 600 10
2
td(off)
EAS [mJ]
t [ns]
400
IAS=4A
td(on) 10
1
IAS=6A tr 200
10
0
0
-1
10
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3532-01MR
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V
Avalanche Current I AV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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